ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1415-7 7 watts, 20 volts, class c microwave 1430 - 1540 mhz general description the 1415-7 is an internally matched, common base transistor capable of providing 7 watts of cw rf output power across the 1430-1540 mhz band. this transistor is specifically designed for telemetry and telecommunications applications. it utilizes gold metalization and diffused ballasting to provide high reliability and superior ruggedness. case outline 55lv, style 1 absolute maximum ratings maximum power dissipation @ 25 c 21 watts o maximum voltage and current bvces collector to emitter voltage 40 volts bvebo emitter to base voltage 3.5 volts ic collector current 1.2 amps maximum temperatures storage temperature - 65 to + 200 c o operating junction temperature + 200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin pg h c vswr power output power input power gain collector efficiency load mismatch tolerance f = 1540 mhz vcc = 20volts 7 7.0 7.5 50 1.4 :1 watt db % bvebo bvces icbo cob hfe q jc emitter to base breakdown collector to emitter breakdown collector leakage current output capacitance dc - current gain thermal resistance ie = 4 ma ic = 20ma vcb = 20 v vcb= 20v, f=1 mhz ic = 500 ma, vce = 5v tc = 25 c o 3.5 40 20 1.0 8.5 100 8.0 volts volts ma pf c/w o initial issue june, 1994
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